SRAM 16M (1Mx16) 8ns 3.3V Async SRAM 3.3v
IS61WV102416BLL-10MI: SRAM 16M (1Mx16) 8ns 3.3V Async SRAM 3.3v
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Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
| Memory Size : | 16 Mbit | Access Time : | 10 ns | ||
| Supply Voltage - Max : | 3.465 V | Supply Voltage - Min : | 3.135 V | ||
| Maximum Operating Current : | 95 mA | Maximum Operating Temperature : | + 85 C | ||
| Minimum Operating Temperature : | - 40 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | TFBGA | Packaging : | Tray |
| Technical/Catalog Information | IS61WV102416BLL-10MI |
| Vendor | ISSI, Integrated Silicon Solution Inc |
| Category | Integrated Circuits (ICs) |
| Memory Type | SRAM - Asynchronous |
| Memory Size | 16M (1M x 16) |
| Speed | 10nS |
| Interface | Parallel |
| Package / Case | 48-MBGA |
| Packaging | Tray |
| Voltage - Supply | 2.4 V ~ 3.6 V |
| Operating Temperature | -40°C ~ 85°C |
| Format - Memory | RAM |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IS61WV102416BLL 10MI IS61WV102416BLL10MI |