SRAM 8M (512Kx16) 10ns Async SRAM 3.3v
IS61WV51216BLL-10TLI: SRAM 8M (512Kx16) 10ns Async SRAM 3.3v
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Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
| Memory Size : | 8 Mbit | Organization : | 512 K x 16 |
| Access Time : | 10 ns | Supply Voltage - Max : | 3.6 V |
| Supply Voltage - Min : | 2.4 V | Maximum Operating Current : | 25 mA |
| Maximum Operating Temperature : | + 85 C | Minimum Operating Temperature : | - 40 C |
| Mounting Style : | SMD/SMT | Package / Case : | TSOP-44 |
| Packaging : | Tray |
| Technical/Catalog Information | IS61WV51216BLL-10TLI |
| Vendor | ISSI, Integrated Silicon Solution Inc |
| Category | Integrated Circuits (ICs) |
| Memory Type | SRAM - Asynchronous |
| Memory Size | 8M (512K x 16) |
| Speed | 10ns |
| Interface | Parallel |
| Package / Case | 44-TSOP II |
| Packaging | Tray |
| Voltage - Supply | 1.65 V ~ 3.6 V |
| Operating Temperature | -40°C ~ 85°C |
| Format - Memory | RAM |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IS61WV51216BLL 10TLI IS61WV51216BLL10TLI 706 1107 ND 7061107ND 706-1107 |