SRAM 4M (512Kx8) 10ns Async SRAM 3.3v
IS61WV5128BLL-10BLI: SRAM 4M (512Kx8) 10ns Async SRAM 3.3v
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Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
| Memory Size : | 4 Mbit | Access Time : | 10 ns | ||
| Supply Voltage - Max : | 3.6 V | Supply Voltage - Min : | 2.4 V | ||
| Maximum Operating Current : | 40 mA | Maximum Operating Temperature : | + 85 C | ||
| Minimum Operating Temperature : | - 40 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | Mini-BGA | Packaging : | Tray |
| Technical/Catalog Information | IS61WV5128BLL-10BLI |
| Vendor | ISSI, Integrated Silicon Solution Inc |
| Category | Integrated Circuits (ICs) |
| Memory Type | SRAM - Asynchronous |
| Memory Size | 4M (512K x 8) |
| Speed | 10ns |
| Interface | Parallel |
| Package / Case | 36-MBGA |
| Packaging | Tray |
| Voltage - Supply | 1.65 V ~ 3.6 V |
| Operating Temperature | -40°C ~ 85°C |
| Format - Memory | RAM |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IS61WV5128BLL 10BLI IS61WV5128BLL10BLI 706 1063 ND 7061063ND 706-1063 |