PinoutDescriptionThe IS62C1024L-70QI is designed as one kind of low power,131,072-word by 8-bit CMOS static RAM device that is available in 32-pin plastic SOP and TSOP (type 1) packages. And this device is fabricated using ISSI's high-performance CMOS technology. Features of the IS62C1024L-70QI a...
IS62C1024L-70QI: PinoutDescriptionThe IS62C1024L-70QI is designed as one kind of low power,131,072-word by 8-bit CMOS static RAM device that is available in 32-pin plastic SOP and TSOP (type 1) packages. And this de...
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The IS62C1024L-70QI is designed as one kind of low power,131,072-word by 8-bit CMOS static RAM device that is available in 32-pin plastic SOP and TSOP (type 1) packages. And this device is fabricated using ISSI's high-performance CMOS technology.
Features of the IS62C1024L-70QI are:(1)High-speed access time: 35, 70 ns; (2)Low active power: 450 mW (typical); (3)Low standby power: 150 uW (typical) CMOS standby; (4)Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications; (5)Fully static operation: no clock or refresh required; (6)TTL compatible inputs and outputs; (7)Single 5V (+/-10%) power supply.
The absolute maximum ratings of the IS62C1024L-70QI can be summarized as:(1)Terminal Voltage with Respect to GND: -0.5 to +7.0 V;(2)Storage Temperature: -65 to +150 °C;(3)Power Dissipation: 1.5 W;(4)DC Output Current (LOW):20 mA;(5)Input Capacitance: 6 pF;(6)Output Capacitance: 8 pF. If you want to know more information such as the electrical characteristics about the IS62C1024L-70QI, please download the datasheet in www.seekic.com or www.chinaicmart.com.