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Description: The ISSI IS61C6416AL, IS62C6416AL, IS64C6416AL and IS65C6416AL are high-speed, 1,048,576-bit static RAMs organized a...


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IS62C6416AL General Description


The ISSI IS61C6416AL, IS62C6416AL, IS64C6416AL and IS65C6416AL are high-speed, 1,048,576-bit static RAMs organized as 65,536 words by 16 bits. They are fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with low power consumption.

When CE  is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.

Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE  and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB ) and Lower Byte (LB ) access.

The IS61C6416AL, IS62C6416AL, IS64C6416AL and IS65C6416AL are packaged in the JEDEC standard 44-pin 400-mil SOJ and 44-pin TSOP (Type II).

IS62C6416AL Maximum Ratings

Symbol Parameter Value Unit
VTERM Terminal Voltage with Respect to GND 0.5 to +7.0 V
TSTG Storage Temperature 65 to +150
PT Power Dissipation 1.5 W
IOUT DC Output Current (LOW) 20 mA

IS62C6416AL Features

• TTL compatible interface levels
• Single 5V ± 10% power supply
• Fully static operation: no clock or refresh
   required
• Available in 44-pin SOJ package and
  44-pin TSOP (Type II)
• Commercial, Industrial and Automotive temperature
   ranges available
• Lead-free available

IS62C6416AL Connection Diagram

IS62C6416AL  Connection DiagramIS62C6416AL  Connection Diagram

IS62C6416AL datasheet

IS62C6416AL
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