IS62LV256

Features:

* Access time: 45, 70 ns
* Low active power: 70 mW
* Low standby power
   - 45 W CMOS standby
* Fully static operation: no clock or refresh required
* TTL compatible inputs and outputs
* Single 3.3V power supply


Pinout




Specifications

Symbol	Parameter	Value	Unit
VTERM	Terminal Voltage with Respect to GND	0.5 to +4.6	V
TBIAS	Temperature Under Bias	55 to +125	°C
TSTG	Storage Temperature	65 to +150	°C
PT	Power Dissipation	0.5	W
IOUT	DC Output Current (LOW)	20	mA

Description

The  ISSI IS62LV256 is a very high-speed, low power, 32,768-word by 8-bit static RAM. IS62LV256 is fabricated using ISSI's high-performance CMOS doublemetal technology.

When  CE is HIGH (deselected), the IS62LV256 assumes a standby mode at which the power dissipation is reduced to 10 W (typical) with CMOS input levels.

Easy memory expansion IS62LV256 is provided by using an active LOW Chip Enable (CE) input and an active LOW Output Enable (OE) input. The active LOW Write Enable (WE) controls both writing and reading of the memory.

The  IS62LV256 is pin compatible with other 32K x 8 SRAMs in 300-mil SOJ, 330-mil plastic SOP, and TSOP (Type I Normal and Reverse Bent) packages.