Features: • Industry-standard Microwire Interface- Non-volatile data storage- Low voltage operation:Vcc = 2.5V to 5.5V- Full TTL compatible inputs and outputs- Auto increment for efficient data dump• x16 bit organization• Hardware and software write protection- Defaults to write-...
IS93C46B: Features: • Industry-standard Microwire Interface- Non-volatile data storage- Low voltage operation:Vcc = 2.5V to 5.5V- Full TTL compatible inputs and outputs- Auto increment for efficient dat...
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The IS93C46B is very popular in many high-volume applications which require low-power, low-density storage. Applications using this device include industrial controls, networking, and numerous other consumer electronics.
Symbol | Parameter | Value | Unit |
VGND | Voltage with Respect to GND | 0.3 to +6.5 | V |
TBIAS | Temperature Under Bias (Industrial) | 40 to +85 | |
TBIAS | Temperature Under Bias (Automotive) | 40 to +125 | |
TSTG | Storage Temperature | 65 to +150 |
The IS93C46B is a low-cost 1kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46B contains power-efficient read/write memory, and organization of 64 words of 16 bits.
The IS93C46B is fully backward compatible with IS93C46.
An instruction set defines the operation of the devices, including read, write, and mode-enable functions. To protect against inadvertent data modification, all erase and write instructions are accepted only while the device is write-enabled. A selected x16 word can be modified with a single WRITE or ERASE instruction. Additionally, the two instructions WRITE ALL or ERASE ALL can program the entire array. Once a device begins its self-timed program procedure, the data out pin (Dout) can indicate the READY/BUSY status by raising chip select (CS). The self-timed write cycle includes an automatic erase-before-write capability. The device can output any number of consecutive words using a single READ instruction.