ISB-E48-0

      This is the description about ISB-E48-0 and ISB-E48-1 of Ultrathin Miniature Package Charger Circuit Voltage Sensor + 3 P-channel MOSFETs. The ISB-E48-0, ISB-E48-1 incorporates in its power input block a high-precision voltage detector that provides protection against overvoltage. The ISB-E48-0, ISB-E48-1 also includes three P-channel MOSFET chips and allows for easy implementation of a charger circuit for cell phones and other portable equipment by incorporating the IC in a current interrupting switch activated by a voltage-detector or in an output block of a charger control IC.
      Here are the features of ISB-E48-0. It is on-chip high-precision voltage detector and three P-channel MOSFET chips. Miniature package makes this IC ideal for miniaturization of electronic devices and high-density mounting on printed circuit boards.
      The Maximum Ratings and Electrical Characteristics of ISB-E48-0 are these (@TA=25°C unless otherwise specified). Input voltage is 12V. Output current is 50mA. Output voltage is from VSS-0.3 to VIN+0.3V. Allowable power dissipation, when mounted on a specified board * is 0.65 W. Drain-to-source voltage is -20V. Gate-to-source voltage is ±10 V. Drain current is -2.0 A. Allowable power dissipation, when mounted on a specified board * is 1.4W. Drain-to-source voltage is -20 V. Gate-to-source voltage is ±10V. Drain current is -4A. Allowable power dissipation, when mounted on a specified board * is 1.5 W. Operating ambient temperature is from -30 to +85 °C. Storage ambient temperature is from -40 to +125°C. Drain-to-source breakdown voltage is -20V. Drain-to-source cutoff current is -10A. Gate-to-source leakage current is ±10A. Gate-to-source cutoff voltage is from -0.3 to -1.0V.
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