MFG:FAIRCHILD Package Cooled:DIP/SOP D/C:08+
MFG: FAIRCHILD
Package Cooled: DIP/SOP
D/C: 08+
Description: The ISL9K3060G3 is a Stealth™ dual diode optimized for low loss performance in high frequency ha...
The ISL9K3060G3 is a Stealth™ dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current (IRM(REC)) and exceptionally soft recovery under typical operating conditions.
This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRM(REC) and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the Stealth™ diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost.
Formerly developmental type TA49411.
|
Symbol |
Parameter |
Ratings |
Units |
|
VRRM |
Repetitive Peak Reverse Voltage |
600 |
V |
|
VRWM |
Working Peak Reverse Voltage |
600 |
V |
|
VR |
DC Blocking Voltage |
600 |
V |
|
IF(AV) |
Average Rectified Forward Current (TC = 125oC) Total Device Current (Both Legs) |
30 60 |
A A |
|
IFRM |
Repetitive Peak Surge Current (20kHz Square Wave) |
70 |
A |
|
IFSM |
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) |
325 |
A |
|
PD |
Power Dissipation |
200 |
W |
|
EAVL |
Avalanche Energy (1A, 40mH) |
20 |
mJ |
|
TJ, TSTG |
Operating and Storage Temperature Range |
-55 to 175 |
°C |
|
TL TPKG |
Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Techbrief TB334 |
300 260 |
°C °C |
ISL9K3060G3
PDF/DataSheet Download
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