MFG:FAIRCHILD Package Cooled:DIP/SOP D/C:08+
MFG: FAIRCHILD
Package Cooled: DIP/SOP
D/C: 08+
Description: UltraFET® Trench from Fairchild is a new advanced MOSFET technology that ac...
UltraFET® Trench from Fairchild is a new advanced MOSFET technology that achieves the lowest possible on- resistance per silicon area while maintaining fast switching and low gate charge. The reduced conduction and switching losses extend battery life in notebook PCs, cellular telephones and other portable information appliances and improve the overall efficiency of high frequency DC-DC converters used to power the latest microprocessors.
| SYMBOL | PARAMETER | ISL9N2357D3ST | UNITS |
| VDSS | Drain to Source Voltage (Note 1) | 30 | V |
| VDGR | Drain to Gate Voltage (RGS = 20k) (Note 1) | 30 | V |
| VGS | Gate to Source Voltage | ±20 | V |
|
ID |
Drain Current Continuous (TC= 25 , VGS = 10V) (Figure 2) Continuous (TC=100, VGS = 10V) Pulsed Drain Current |
35 35 Figure 4 |
A A A |
| PD | Power Dissipation Derate Above 25 |
100 0.67 |
W W/ |
| TJ,TSTG | Operating and Storage Temperatur | -55 to 175 | |
| TL Tpkg |
Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Techbrief TB334 |
300 260 |
|
| THERMAL SPECIFICATIONS | |||
| RJC | Thermal Resistance Junction to Case, TO-252 | 1.5 | /W |
| RJA | Thermal Resistance Junction to Ambient TO-252 | 100 | /W |
NOTE:
1.TJ = 25 to 150 .
CAUTION: Stresses above those listed in "Absolute Maximum Ratings!± may cause permanent damage to the device. This is a stress only ratg and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
ISL9N2357D3ST
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