Transistor Polarity
: N-Channel
Gate-Source Breakdown Voltage
: +/- 20 V
Configuration
: Single
Maximum Operating Temperature
: + 175 C
Mounting Style
: SMD/SMT
Packaging
: Reel
Drain-Source Breakdown Voltage
: 30 V
Continuous Drain Current
: 75 A
Resistance Drain-Source RDS (on)
: 0.0019 Ohms
Package / Case
: TO-263AB
Features: • Fast switching
• rDS(ON) = 0.0019Ω (Typ), VGS = 10V
• rDS(ON) = 0.0027Ω (Typ), VGS = 4.5V
• Qg (Typ) = 110nC, VGS = 5V
• Qgd (Typ) = 31nC
• CISS (Typ) = 11000pFApplication• DC/DC convertersSpecificationsTA =25°C unless otherwise noted
|
Symbol |
Parameter |
Ratings |
Units |
| VDSS |
Drain to Source Voltage |
30 |
V |
| VGS |
Gate to Source Voltage |
±20 |
V |
| ID |
Drain Current
Continuous (TC = 25oC, VGS = 10V)
Continuous (TC = 100oC, VGS = 4.5V)
Continuous (TC = 25oC, VGS = 10V, RJA= 43oC/W)
Pulsed |
75 |
A |
|
75 |
A |
|
28 |
A |
|
Figure 4 |
A |
| PD |
Power dissipation
Derate above 25oC |
345
2.3 |
W
W/oC |
| TJ, TSTG |
Operating and Storage Temperature |
-55 to 175 |
oC |
Thermal Characteristics
| RJC |
Thermal Resistance Junction to Case TO-263 |
0.43 |
oC/W |
| RJA |
Thermal Resistance Junction to Ambient TO-263 |
62 |
oC/W |
| RJA |
Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area |
43 |
oC/W |
Package Marking and Ordering Information
| Device Marking |
Device |
Package |
Reel Size |
Tape Width |
Quantity |
| N302AS |
ISL9N302AS3ST |
TO-263AB |
330mm |
24mm |
800 units |
Description This ISL9N302AS3ST employs a new advanced trench MOSFET technology and features low gate charge while maintaining
low on-resistance.
Optimized for switching applications, this ISL9N302AS3ST improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.
Parameters: | Technical/Catalog Information | ISL9N302AS3ST |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 75A |
| Rds On (Max) @ Id, Vgs | 2.3 mOhm @ 75A, 10V |
| Input Capacitance (Ciss) @ Vds | 11000pF @ 15V |
| Power - Max | 345W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 300nC @ 10V |
| Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | ISL9N302AS3ST
ISL9N302AS3ST
|
ISL9N302AS3ST Data Sheet
