MFG:FAIRCHILD Package Cooled:DIP/SOP D/C:08+
MFG: FAIRCHILD
Package Cooled: DIP/SOP
D/C: 08+
Description: This device employs a new advanced trench MOSFET technology and features low ...
This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining
low on-resistance.
Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.
TA =25°C unless otherwise noted
|
Symbol |
Parameter |
Ratings |
Units |
| VDSS | Drain to Source Voltage |
30 |
V |
| VGS | Gate to Source Voltage |
±20 |
V |
| ID | Drain Current Continuous (TC = 25oC, VGS = 10V) Continuous (TC = 100oC, VGS = 4.5V) Continuous (TC = 25oC, VGS = 10V, RJA= 43oC/W) Pulsed |
75 |
A |
|
75 |
A | ||
|
28 |
A | ||
|
Figure 4 |
A | ||
| PD | Power dissipation Derate above 25oC |
345 |
W |
| TJ, TSTG | Operating and Storage Temperature |
-55 to 175 |
oC |
Thermal Characteristics
| RJC | Thermal Resistance Junction to Case TO-263 |
0.43 |
oC/W |
| RJA | Thermal Resistance Junction to Ambient TO-263 |
62 |
oC/W |
| RJA | Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area |
43 |
oC/W |
Package Marking and Ordering Information
| Device Marking | Device | Package | Reel Size | Tape Width | Quantity |
| N302AS | ISL9N302AS3ST | TO-263AB | 330mm | 24mm | 800 units |
ISL9N302AS3ST
PDF/DataSheet Download
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