ISL9N304AS3ST

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Continuous Drain Current : 75 A
Package / Case : TO-263AB
Resistance Drain-Source RDS (on) : 4.5 Ohms


Features:

* Fast switching
*r_DS(ON) = 0.0036 (Typ), VGS = 10V
*r_DS(ON) = 0.0060 (Typ), VGS = 4.5V
*Q_g  (Typ) = 38nC, V_GS  = 5V
 *Q_gd  (Typ) = 13nC
*C_ISS  (Typ) = 4075pF



Application

* DC/DC converters


Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain to Source Voltage	30	V
VGS	Gate to Source Voltage	±20	V
ID	Drain Current Continuous (TC = 25, VGS = 10V) Continuous (TC = 100, VGS = 4.5V) Continuous (TC = 25, VGS = 10V, RJA = 43/W) Pulsed	75	A
		74	A
		20	A
		Figure 4	A
PD	Power dissipation Derate above 25	145 0.97	W W/
TJ , TSTG	Operating and Storage Temperature	-55 to 175

Description

This ISL9N304AS3ST employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.

Optimized for switching applications, this ISL9N304AS3ST improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.