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Part Number: ISL9N306AD3ST

 

 

 

 

Description: This device employs a new advanced trench MOSFET technology and features low gate charge while maintai...


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ISL9N306AD3ST General Description


This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining
low on-resistance.

Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.

ISL9N306AD3ST Maximum Ratings

Symbol Parameter Ratings Units
VDSS Drain to Source Voltage 30 V
VGS Gate to Source Voltage ±20 V
ID Drain Current
Continuous (TC= 25oC, VGS= 10V) = 100o
Continuous (TC= 25oC, VGS= V, RJC=52oCW
Pulsed		 50 A
50 A
16 A
Figure 4A
PD Power dissipation
Derate above 25oC
 125
0.83		 W
W/
TJ, TSTG Operating and Storage Temperature -55 to 175

ISL9N306AD3ST Features

•  Fast switching
•  rDS(ON)     = 0.0052Ω (Typ), VGS = 10V
•  rDS(ON)     = 0.0085Ω (Typ), VGS = 4.5V
•  Qg (Typ)    = 30nC,               VGS = 5V
•  Qgd (Typ)  = 11nC
•  CISS (Typ) = 3400pF

ISL9N306AD3ST Typical Application

•    DC/DC converters

ISL9N306AD3ST datasheet

ISL9N306AD3ST
PDF/DataSheet Download

  • Datasheet: ISL9N306AD3ST
  • File Size: 260689 KB
  • Manufacturer: FAIRCHILD [Fairchild Semiconductor]
  • Click here to Download

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