MFG:HARRIS Package Cooled:TO-252 D/C:09+
MFG: HARRIS
Package Cooled: TO-252
D/C: 09+
Description: This device employs a new advanced trench MOSFET technology and features low gate char...
This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.
Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.
| Symbol | Parameter | Ratings | Units |
| VDSS | Drain to Source Voltage | 30 | V |
| VGS | Gate to Source Voltage | ±20 | V |
| ID | Drain Current Continuous (TC = 25, VGS = 10V) Continuous (TC = 100, VGS = 4.5V) Continuous (TC = 25, VGS = 10V, RJA= 52/W) Pulsed |
50 | A |
| 48 | A | ||
| 14 | A | ||
| Figure 4 | A | ||
| PD | Power dissipation Derate above 25 |
100 0.67 |
W W/ |
| TJ, TSTG | Operating and Storage Temperature | -55 to 175 |
• Fast switching
• rDS(ON) = 0.0064 (Typ), VGS = 10V
• rDS(ON) = 0.010 (Typ), VGS = 4.5V
• Qg (Typ) = 24nC, VGS = 5V
• Qgd (Typ) = 8nC
• CISS (Typ) = 2600pF
ISL9N308AD3ST
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