ISL9N322AD3ST

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Continuous Drain Current : 20 A
Package / Case : TO-252AA
Resistance Drain-Source RDS (on) : 0.022 Ohms


Features:

• Fast switching
• r_DS(ON) = 0.018 (Typ), V_GS= 10V
• r_DS(ON) = 0.028 (Typ), V_GS= 4.5V
• Q_g(Typ) = 9nC, VGS= 5V
• Q_gd(Typ) =3nC
• C_ISS (Typ) =970pF


Application

• DC/DC converters


Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain to Source Voltage	30	V
VGS	Gate to Source Voltage	±20	V
ID	Drain Current Continuous (TC = 25oC, VGS = 10V) Continuous (TC = 100oC, VGS = 4.5V) Continuous (TC = 25oC, VGS = 10V, RJA = 52oC/W) Pulsed	20	A
		20	A
		8	A
		Figure 4	A
PD	Power dissipation Derate above 25oC	50 0.33	W W/oC
TJ, TSTG	Operating and Storage Temperature	-55 to 175	oC

Description

This ISL9N322AD3ST employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.

Optimized for switching applications, this ISL9N322AD3ST improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.