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ITC1000

SpecificationsPower DissipationDevice Dissipation1 @25°C (Pd)........................ 3400 WThermal Resistance1 (JC) ................................08°C/WVoltage and CurrentCollector-Base Voltage ...........................................65VEmitter-Base Voltage......................................

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SeekIC No. : 004381325 Detail

ITC1000: SpecificationsPower DissipationDevice Dissipation1 @25°C (Pd)........................ 3400 WThermal Resistance1 (JC) ................................08°C/WVoltage and CurrentCollector-Base Voltage ....

ITC1000 Data Sheet

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Part Number:
ITC1000
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Specifications

Power Dissipation
Device Dissipation1 @25°C (Pd)........................ 3400 W
Thermal Resistance1 (JC) ................................08°C/W
Voltage and Current
Collector-Base Voltage ...........................................65V
Emitter-Base Voltage............................................ 3.5V
Collector Current1................................................. 80A
Temperatures
Storage Temperature........................... -40 to +150°C
Operating Junction Temperature1.................. +200°C


Description

The ITC1000 is a common base bipolar transistor. It is designed for pulsed interrogator systems in the frequency band of 1030 MHz. The device has gold thin-film metallization for proven high MTTF. The transistor includes input returns for improved output rise time . Low thermal resistance package reduces junction temperature which extends the life time of the product.




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