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ITF86110DK8T

Features: • Ultra Low On-Resistance - rDS(ON) = 0.025, VGS =10V - rDS(ON) = 0.034, VGS = 4.5V - rDS(ON) = 0.042, VGS = 4.5V• 2.5 V Gate Drive Capability• Small Profile Package• Gate to Source Protection Diode• Simulation Models - Temperature Compensated PSPICE™ ...

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SeekIC No. : 004381330 Detail

ITF86110DK8T: Features: • Ultra Low On-Resistance - rDS(ON) = 0.025, VGS =10V - rDS(ON) = 0.034, VGS = 4.5V - rDS(ON) = 0.042, VGS = 4.5V• 2.5 V Gate Drive Capability• Small Profile Package̶...

ITF86110DK8T Data Sheet

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Part Number:
ITF86110DK8T
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Ultra Low On-Resistance
   - rDS(ON) = 0.025, VGS =10V
   - rDS(ON)  = 0.034, VGS = 4.5V
   - rDS(ON) = 0.042, VGS = 4.5V
• 2.5 V Gate Drive Capability
• Small Profile Package
• Gate to Source Protection Diode
• Simulation Models
   - Temperature Compensated PSPICE™ and SABER Electrical Models
   - Spice and SABER Thermal Impedance Models
   - www.intersil.com
• Peak Current vs Pulse Width Curve
• Transient Thermal Impedance Curve vs Board Mounting Area
• Switching Time vs RGS Curves 


Specifications

    ITF86110DK8T UNITS
Drain to Source Voltage (Note 1)
VDSS
30
V
Drain to Gate Voltage (RGS = 20k) (Note 1)
VDGR
30
V
Gate to Source Voltage
VGS
±20
V
Drain Current
Continuous (TA = 25, VGS =10V) (Note 2)
Continuous (TA = 25, VGS = 4.5V) (Note 2)
Continuous (TA = 100, VGS = 4.5V) (Note 2)
Continuous (TA = 100, VGS = 4.0V) (Note 2)
Pulsed Drain Current

ID
ID
ID
ID
IDM

7.5
6.5
2.0
1.5
Figure 4

A
A
A
A
A
Power Dissipation (Note 2)
Derate Above 25
PD
2.5
20
W
mW/
Operating and Storage Temperature
TJ, TSTG
-55 to 150
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Technical Brief TB370

TL
Tpkg

300
260



CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. TJ = 25 to 125.
2. 50/W measured using FR-4 board with 0.14 in2 (90.3 mm2) copper pad at 1 second.
3. 228/W measured using FR-4 board with 0.006 in2 (3.9 mm2) copper pad at 1000 second.


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