ITR20002

Series: -
Sensing Method: Reflective
Current - DC Forward (If): 50mA
Output Type: Phototransistor
Mounting Type: Through Hole
Packaging: Bulk
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 30V
Sensing Distance: 0.236" (6mm)
Manufacturer: Everlight Electronics Co Ltd
Response Time: *
Package / Case: 4-DIP (0.100", 2.54mm)


Features:

• Fast response time
• High analytic
• Cut-off visible wavelength p=840nm
• High sensitivit
• Pb free


Application

• Copier
• Scanner
• Non-contact Switching
• For Direct PC Board


Specifications

Parameter		Symbol	Rating	Unit
Input	Power Dissipation	PD	100	mW
	Reverse Voltage	VR	5	V
	Forward Current	IF	60	mA
	Peak Forward Current(*1)	IFP	1	A
Output	Collect Power Dissipation	Pc	80	mW
	Collect Current	Ic	20	mA
	Collector-Emitter Voltage	VCE	35	V
	Emitter-Collector Voltage	VEC	6	V
Operating Temperature		Topr	-25~+85
Storage Temperature		Tstg	-40~+85
Soldering Temperature(*2)		Tsol	260

Description

The ITR20002 consist of an infrared emitting diode and an NPN silicon phototransistor, encased side-by-side on converging optical axis in a black thermoplastic housing. The phototransistor receives radiation from the IRED only. This is the normal situation. But when an object is in between, phototransistor could not receives the radiation. For additional component information, please refer to IR4204-9 and PT4204-6B.