MFG:EVERLIGHT Package Cooled:DIP-4 D/C:206+
MFG: EVERLIGHT
Package Cooled: DIP-4
D/C: 206+
Description: The ITR9608 consist of an infrared emitting diode and an NPN silicon phototransistor, encased side-by-...
The ITR9608 consist of an infrared emitting diode and an NPN silicon phototransistor, encased side-by-side on converging optical axis in a black Thermoplastic Housing The phototransistor receives radiation from the IRED only .This is the normal Situation. But when an object is in between , phototransistor could not receives the radiation. For additional component information , please refer to IR928-6C and PT928-6C
|
Parameter |
Symbol |
Ratings |
Unit | |
| Input | Power Dissipation at(or below) 25 Free Air Temperature |
Pd |
100 |
mW |
| Reverse Voltage |
VR |
5 |
V | |
| Forward Current |
IF |
50 |
mA | |
| Peak Forward Current (*1) Pulse width 100s, Duty cycle=1% |
IFP |
1 |
A | |
| Output | Collector Power Dissipation |
PC |
75 |
mW |
| Collector Current |
IC |
50 |
mA | |
| Collector-Emitter Voltage |
B VCEO |
30 |
V | |
| Emitter-Collector Voltage |
B VECO |
5 |
V | |
| Operating Temperature |
Topr |
-25~+85 |
||
| Storage Temperature |
Tstg |
-40~+85 |
||
| Lead Soldering Temperature (*2) (1/16 inch form body for 5 seconds) |
Tsol |
260 |
||
ITR20002
PDF/DataSheet Download
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