ITS716G

Power Switch ICs - Power Distribution SMART HI SIDE PWR SWITCH INDUSTRY APP

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SeekIC No. : 00629974 Detail

ITS716G: Power Switch ICs - Power Distribution SMART HI SIDE PWR SWITCH INDUSTRY APP

floor Price/Ceiling Price

US $ 1.03~1.35 / Piece | Get Latest Price
Part Number:
ITS716G
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~605
  • 605~1000
  • 1000~2000
  • 2000~5000
  • Unit Price
  • $1.35
  • $1.13
  • $1.08
  • $1.03
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/5/1

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Product Details

Quick Details

Number of Outputs : 4 On Resistance (Max) : 0.028 Ohms
Supply Current (Max) : 1.9 mA Maximum Operating Temperature : + 85 C
Mounting Style : SMD/SMT Package / Case : DSO-20    

Description

On Time (Max) :
Off Time (Max) :
Operating Supply Voltage :
Maximum Operating Temperature : + 85 C
Mounting Style : SMD/SMT
Number of Outputs : 4
Package / Case : DSO-20
On Resistance (Max) : 0.028 Ohms
Supply Current (Max) : 1.9 mA


Application

• µC compatible high-side power switch with diagnostic feedback for 12V and 24V grounded loads in industrial applications
• All types of resistive, inductive and capacitve loads
• Most suitable for loads with high inrush currents, so as lamps
• Replaces electromechanical relays, fuses and discrete circuits




Pinout

  Connection Diagram


Specifications

Parameter Symbol Value Unit
Supply voltage (overvoltage protection see page 6) Vbb 43 V
Supply voltage for full short circuit protection
Tj,start = -40 ...+150
Vbb 36 V
Load current (Short - circuit current, see page 6) IL self limited A
Load dump protection1) VLoadDump = VA + Vs, VA = 13.5 V
RI2) = 2 , td = 400 ms; IN = low or high,
each channel loaded with RL = 13.5 ,
VLoad dump3) 60 V
Input voltage (DC) see internal circuit diagram page 9
Current through input pin (DC)
Pulsed current through input pin5)
Current through status pin (DC)
VIN
IIN
IIN
IST
-10 ... +16
±0.3
±5.0
±5.0
V
mA
Junction temperature Tj 150
Operating temperature Ta -30...+85
Storage temperature Tstg -40 ...+105
Power dissipation (DC)4) Ta = 25:
(all channels active) Ta = 85:
Ptot 3.6
1.9
W
Maximal switchable inductance, single pulse
Vbb = 12V, Tj,start = 1504), see diagrams on page 10
IL = 2.3 A, EAS = 76 mJ, 0 one channel:
IL = 3.3 A, EAS = 182 mJ, 0 two parallel channels:
IL = 4.7 A, EAS = 460 mJ, 0 four parallel channels:
ZL 1.0
4.0
8.0
mH
Electrostatic discharge capability (ESD) IN:
(Human Body Model) ST:
out to all other pins shorted:
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
R=1.5k; C=100pF
VESD 1.0
4.0
8.0
kV



Description

• N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology.
• Providing embedded protective functions

ITS716G




Parameters:

Technical/Catalog InformationITS716G
VendorInfineon Technologies
CategoryIntegrated Circuits (ICs)
Package / CaseDSO-20
Mounting TypeSurface Mount
TypeHigh Side
Voltage - Supply5.5 V ~ 40 V
On-State Resistance110 mOhm
Current - Output / Channel2.6A
Current - Peak Output9A
PackagingTape & Reel (TR)
Input TypeNon-Inverting
Number of Outputs4
Operating Temperature-30°C ~ 85°C
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names ITS716G
ITS716G



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