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IW4011B

Features: • Operating Voltage Range: 3.0 to 18 V• Maximum input current of 1 A at 18 V over full packagetemperature range; 100 nA at 18 V and 25°C• Noise margin (over full package temperature range): 1.0 V min @ 5.0 V supply 2.0 V min @ 10.0 V supply 2.5 V min @ 15.0 V supplyPino...

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SeekIC No. : 004381390 Detail

IW4011B: Features: • Operating Voltage Range: 3.0 to 18 V• Maximum input current of 1 A at 18 V over full packagetemperature range; 100 nA at 18 V and 25°C• Noise margin (over full package ...

IW4011B Data Sheet

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Part Number:
IW4011B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

• Operating Voltage Range: 3.0 to 18 V
• Maximum input current of 1 A at 18 V over full packagetemperature range; 100 nA at 18 V and 25°C
• Noise margin (over full package temperature range): 1.0 V min @ 5.0 V supply 2.0 V min @ 10.0 V supply 2.5 V min @ 15.0 V supply


Pinout

Connection Diagram


Specifications

Symbol
Parameter
Value
Unit
VCC
DC Supply Voltage (Referenced to GND)
-0.5 to +20
V
VIN
DC Input Voltage (Referenced to GND)
-0.5 to VCC +0.5
V
VOUT
DC Output Voltage (Referenced to GND)
-0.5 to VCC +0.5
V
IIN
DC Input Current, per Pin
±10
mA
PD
Power Dissipation in Still Air, Plastic DIP+
SOIC Package+
750
500
mW
PD
Power Dissipation per Output Transistor
100
mW
Tstg
Storage Temperature
-65 to +150
°C
TL
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package)
260
°C
*Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
+Derating - Plastic DIP: - 10 mW/°C from 65° to 125°C
SOIC Package: : - 7 mW/°C from 65° to 125°C


Description

The IW4011B NAND gates provide the system designer with direct emplementation of the NAND function.


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