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IXBH20N160

Features: • International standard package JEDEC TO-247 AD• High Voltage BIMOSFETTM- replaces high voltage Darlingtons and series connected MOSFETs- lower effective RDS(on)• Monolithic construction- high blocking voltage capability- very fast turn-off characteristics• MOS G...

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IXBH20N160: Features: • International standard package JEDEC TO-247 AD• High Voltage BIMOSFETTM- replaces high voltage Darlingtons and series connected MOSFETs- lower effective RDS(on)• Monoli...

IXBH20N160 Data Sheet

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Part Number:
IXBH20N160
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• International standard package JEDEC TO-247 AD
• High Voltage BIMOSFETTM
- replaces high voltage Darlingtons and series connected MOSFETs
- lower effective RDS(on)
• Monolithic construction
- high blocking voltage capability
- very fast turn-off characteristics
• MOS Gate turn-on
- drive simplicity
• Reverse conducting capability


Application

• Flyback converters
• DC choppers
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode power supplies
• CRT deflection
• Lamp ballasts


Specifications

Symbol Conditions Maximum Ratings
    20N140 20N160  
VCES TJ = 25 to 150 1400 1600 v
VCGR TJ = 25 to 150; RGE = 1 1400 1600 v
VGES Continuous ±20 V
 VGEM   ±30 V
IC25 TC = 25, 20 A
IC90 TC = 90 13 A
ICM TC = 25°C, 1 ms 26 A
SSOA
(RBSOA)		 VGE= 15 V, TVJ = 125, RG = 47 VCE = 0.8•VCES
Clamped inductive load, L = 100 H		 ICM =24 A
PC TC = 25 200 W
TJ   -55 ... +150
TJM   150
Tstg   -55 ... +150
TL 1.6 mm (0.063 in) from case for 10 s 300
Md Mounting torque 1.15/10 Nm/lb.in.
Weight   6 g



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