IGBT Transistors 1700V 75A
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| Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 1700 V |
| Maximum Gate Emitter Voltage : | 20 V | Power Dissipation : | 360 W |
| Maximum Operating Temperature : | + 150 C | Package / Case : | TO-247-3 |
| Packaging : | Tube |
| Symbol | Conditions | Maximum | Ratings |
| VCES | TJ = 25 to 150 | 1700 | v |
| VCGR | TJ = 25 to 150; RGE = 1 | 1700 | v |
| VGES | Continuous | ±20 | V |
| VGEM | Transient | ±30 | V |
| IC25 | TC = 25, | 75 | A |
| IC90 | TC = 90 | 42 | A |
| ICM | TC = 25°C, 1 ms | 180 | A |
| SSOA (RBSOA) |
VGE= 15 V, TVJ = 125, RG = 47 VCE = 0.8•VCES Clamped inductive load, L = 100 H |
ICM =90 VCES = 1350 |
A |
| TSC (SCSOA) |
VGE = 15 V, VCES = 1200V, TJ = 125°C RG = 10 Ω non repetitive |
10 | µs |
| PC | TC = 25 | 360 | |
| TJ | -55 ... +150 | ||
| TJM | 150 | ||
| Tstg | -55 ... +150 | ||
| Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s |
350 260 |
||
| Md | Mounting torque | 1.13/10 | Nm/lb.in. |
| Weight | TO-247 TO-268 |
6 4 |
g g |
| Technical/Catalog Information | IXBH42N170 |
| Vendor | IXYS |
| Category | Discrete Semiconductor Products |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 1700V |
| Current - Collector (Ic) (Max) | 80A |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 42A |
| Power - Max | 360W |
| Mounting Type | Through Hole |
| Package / Case | TO-247AD |
| Packaging | Bulk |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IXBH42N170 IXBH42N170 |