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IXBH9N140G

Features: • High Voltage BIMOSFETTM- replaces high voltage Darlingtons and series connected MOSFETs- lower effective RDS(on)• MOS Gate turn-on- drive simplicity- MOSFET compatible for 10V turn on gate voltage• Monolithic construction- high blocking voltage capability- very fast t...

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IXBH9N140G: Features: • High Voltage BIMOSFETTM- replaces high voltage Darlingtons and series connected MOSFETs- lower effective RDS(on)• MOS Gate turn-on- drive simplicity- MOSFET compatible for 10...

IXBH9N140G Data Sheet

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Part Number:
IXBH9N140G
Supply Ability:
5000

Price Break

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• High Voltage BIMOSFETTM
- replaces high voltage Darlingtons and series connected MOSFETs
- lower effective RDS(on)
• MOS Gate turn-on
- drive simplicity
- MOSFET compatible for 10V turn on gate voltage
• Monolithic construction
- high blocking voltage capability
- very fast turn-off characteristics
• International standard package JEDEC TO-247 AD
• Reverse conducting capability


Application

• Flyback converters
• DC choppers
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode power supplies
• CRT deflection
• Lamp ballasts


Specifications

Symbol Conditions Maximum Ratings
    20N140 20N160  
VCES TJ = 25 to 150 1400 1600 v
VCGR TJ = 25 to 150; RGE = 1 1400 1600 v
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC = 25, 9 A
IC90 TC = 90 5 A
ICM TC = 25°C, 1 ms 10 A
SSOA
(RBSOA)		 VGE= 15 V, TVJ = 125, RG = 47 VCE = 0.8•VCES
Clamped inductive load, L = 100 H		 ICM =12 A
PC TC = 25 100 W
TJ   -55 ... +150
TJM   150
Tstg   -55 ... +150
TL 1.6 mm (0.063 in) from case for 10 s 300
Md Mounting torque 1.15/10 Nm/lb.in.
Weight   6 g



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