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IXBH9N160G

IGBT Transistors 9 Amps 1600V

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SeekIC No. : 00142632 Detail

IXBH9N160G: IGBT Transistors 9 Amps 1600V

IXBH9N160G Data Sheet

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Part Number:
IXBH9N160G
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 1600 V
Collector-Emitter Saturation Voltage : 4.9 V Maximum Gate Emitter Voltage : 20 V
Maximum Operating Temperature : + 150 C Package / Case : TO-247AD-3
Packaging : Tube    

Description

Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Gate Emitter Voltage : 20 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Package / Case : TO-247AD-3
Collector- Emitter Voltage VCEO Max : 1600 V
Collector-Emitter Saturation Voltage : 4.9 V


Features:

• High Voltage BIMOSFETTM
- replaces high voltage Darlingtons and series connected MOSFETs
- lower effective RDS(on)
• MOS Gate turn-on
- drive simplicity
- MOSFET compatible for 10V turn on gate voltage
• Monolithic construction
- high blocking voltage capability
- very fast turn-off characteristics
• International standard package JEDEC TO-247 AD
• Reverse conducting capability


Application

• Flyback converters
• DC choppers
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode power supplies
• CRT deflection
• Lamp ballasts


Specifications

Symbol Conditions Maximum Ratings
    20N140 20N160  
VCES TJ = 25 to 150 1400 1600 v
VCGR TJ = 25 to 150; RGE = 1 1400 1600 v
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC = 25, 9 A
IC90 TC = 90 5 A
ICM TC = 25°C, 1 ms 10 A
SSOA
(RBSOA)		 VGE= 15 V, TVJ = 125, RG = 47 VCE = 0.8•VCES
Clamped inductive load, L = 100 H		 ICM =12 A
PC TC = 25 100 W
TJ   -55 ... +150
TJM   150
Tstg   -55 ... +150
TL 1.6 mm (0.063 in) from case for 10 s 300
Md Mounting torque 1.15/10 Nm/lb.in.
Weight   6 g



Parameters:

Technical/Catalog InformationIXBH9N160G
VendorIXYS
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)1600V
Current - Collector (Ic) (Max)9A
Vce(on) (Max) @ Vge, Ic7V @ 15V, 5A
Power - Max100W
Mounting TypeThrough Hole
Package / CaseTO-247AD
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXBH9N160G
IXBH9N160G



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