IGBT Transistors 42 Amps 1700V 6.0 V Rds
IXBN42N170A: IGBT Transistors 42 Amps 1700V 6.0 V Rds
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| Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 1700 V | ||
| Maximum Gate Emitter Voltage : | +/- 20 V | Maximum Operating Temperature : | + 150 C | ||
| Package / Case : | SOT-227B-4 | Packaging : | Tube |
| Technical/Catalog Information | IXBN42N170A |
| Vendor | IXYS |
| Category | Discrete Semiconductor Products |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 1700V |
| Current - Collector (Ic) (Max) | 75A |
| Vce(on) (Max) @ Vge, Ic | 3.6V @ 15V, 6A |
| Power - Max | 360W |
| Mounting Type | Through Hole |
| Package / Case | TO-247AD |
| Packaging | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IXBN42N170A IXBN42N170A |