IGBT Transistors 75 Amps 1200V
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
| Configuration : | Single Dual Emitter | Collector- Emitter Voltage VCEO Max : | 1200 V |
| Collector-Emitter Saturation Voltage : | 2.2 V | Maximum Gate Emitter Voltage : | +/- 20 V |
| Maximum Operating Temperature : | + 150 C | Package / Case : | SOT-227B-4 |
| Packaging : | Tube |
| Symbol | Conditions | Maximum | Ratings |
| VCES VCGR VGES VGEM |
TJ = 25 to 150 TJ = 25 to 150; RGE = 20 k Continuous Transient |
1200 1200 ±20 ±30 |
V V V V |
| IC25 IC90 ICM |
TC = 25 TC = 90 TC = 90, tp = 1 ms |
150 95 190 |
A A A |
| RBSOA | VGE = ±15 V, TJ = 125, RG = 15 Clamped inductive load, L = 30 µH |
ICM = 150 VCEK < VCES |
A |
| tSC (SCSOA) |
VGE = ±15 V, VCE = VCES, TJ = 125 RG = 15 , non repetitive |
10 | µs |
| PC VISOL |
TC = 25°C IGBT 50/60 Hz; IISOL 1 mA |
660 2500 |
W V~ |
| TJ Tstg |
-40 ... +150 -40 ... +150 |
| | |
| Md | Mounting torque Terminal connection torque (M4) |
1.5/13 1.5/13 |
Nm/lb.in. Nm/lb.in. |
| Weight | 30 | g |