IXDN75N120

IGBT Transistors 75 Amps 1200V

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IXDN75N120 Picture
SeekIC No. : 00143460 Detail

IXDN75N120: IGBT Transistors 75 Amps 1200V

floor Price/Ceiling Price

Part Number:
IXDN75N120
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Configuration : Single Dual Emitter Collector- Emitter Voltage VCEO Max : 1200 V
Collector-Emitter Saturation Voltage : 2.2 V Maximum Gate Emitter Voltage : +/- 20 V
Maximum Operating Temperature : + 150 C Package / Case : SOT-227B-4
Packaging : Tube    

Description

Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 2.2 V
Collector- Emitter Voltage VCEO Max : 1200 V
Configuration : Single Dual Emitter
Package / Case : SOT-227B-4


Features:

· NPT IGBT technology
· low saturation voltage
· low switching losses
· square RBSOA, no latch up
· high short circuit capability
· positive temperature coefficient for easy paralleling
· MOS input, voltage controlled
· International standard package miniBLOC



Application

·AC motor speed control
·DC servo and robot drives
·DC choppers
·Uninteruptible power supplies (UPS)
·Switch-mode and resonant-mode power supplies



Specifications

Symbol Conditions Maximum Ratings
VCES
VCGR
VGES
VGEM
TJ = 25 to 150
TJ = 25 to 150; RGE = 20 k
Continuous
Transient
1200
1200
±20
±30
V
V
V
V
IC25
IC90
ICM
TC = 25
TC = 90
TC = 90, tp = 1 ms
150
95
190
A
A
A
RBSOA VGE = ±15 V, TJ = 125, RG = 15
Clamped inductive load, L = 30 µH
ICM = 150
VCEK < VCES
A
tSC
(SCSOA)
VGE = ±15 V, VCE = VCES, TJ = 125
RG = 15 , non repetitive
10 µs
PC
VISOL
TC = 25°C IGBT
50/60 Hz; IISOL 1 mA
660
2500
W
V~
TJ
Tstg
  -40 ... +150
-40 ... +150
|
Md Mounting torque
Terminal connection torque (M4)
1.5/13
1.5/13
Nm/lb.in.
Nm/lb.in.
Weight   30 g



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