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IXDT30N120

IGBT Transistors 60 Amps 1200V 2.4 Rds

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SeekIC No. : 00143501 Detail

IXDT30N120: IGBT Transistors 60 Amps 1200V 2.4 Rds

IXDT30N120 Data Sheet

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Part Number:
IXDT30N120
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 1200 V
Maximum Gate Emitter Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : TO-247AD-3 Packaging : Tube    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector- Emitter Voltage VCEO Max : 1200 V
Package / Case : TO-247AD-3


Features:

· NPT IGBT technology
· low saturation voltage
· low switching losses
· square RBSOA, no latch up
· high short circuit capability
· positive temperature coefficient for easy paralleling
· MOS input, voltage controlled
· optional ultra fast diode
· International standard packages


Application

· AC motor speed control
· DC servo and robot drives
· DC choppers
· Uninteruptible power supplies (UPS)
· Switch-mode and resonant-mode power supplies


Specifications

Symbol
Test Conditions
Maximum
Ratings
VCES
VCGR
 TJ = 25to 150
TJ = 25 to 150; RGE = 1 M
1200
1200
V
V
VGES
VGEM
 Continuous
Transient
±20
±30
V
V
IC25
IC90
IDM
TC = 25
TC = 90
TC = 90, tp = 1 ms
60
38
70
A
A
A
RBSOA
 V = ±15 V, T = 125, R = 47
Clamped inductive load, L = 30 µH
ICM = 50
VCEK < VCES
A
tSC
(SCSOA)
 VGE = ±15 V, VCE = VCES, TJ = 125
RG = 47, non repetitive
10
µs
PC
TC = 25                        IGBT
                                      Diode
300
135
W
W
TJ
TJM
Tstg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
  
-55 ... +150
             150
-55 ... +150
300



Md
 Mounting torque
1.1/10
Nm/lb.in.
Weight
6
g




Parameters:

Technical/Catalog InformationIXDT30N120
VendorIXYS
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)60A
Vce(on) (Max) @ Vge, Ic2.9V @ 15V, 30A
Power - Max300W
Mounting TypeSurface Mount
Package / CaseTO-268
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXDT30N120
IXDT30N120



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