IXEN60N120D1

Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Collector-Emitter Saturation Voltage : 2.1 V
Maximum Gate Emitter Voltage : +/- 20 V
Collector- Emitter Voltage VCEO Max : 1200 V
Package / Case : SOT-227B-4


Features:

• NPT³ IGBT
   - low saturation voltage
   - positive temperature coefficient for easy paralleling
   - fast switching
   - short tail current for optimized performance in resonant circuits
• miniBLOC package
   - isolated copper base plate
   - screw terminals
   - kelvin emitter terminal for easy drive
   - industry standard outline


Application

• single switches and with complementary free wheeling diodes
• choppers
• phaselegs, H bridges, three phase bridges e.g. for
   - power supplies, UPS
   - AC, DC and SR drives
   - induction heating


Specifications

Symbol	Conditions	Maximum	Ratings
VCES	TVJ = 25°C to 150°C	1200	V
VGES		± 20	V
IC25	TC = 25°C	100	A
IC90	TC = 90°C	65	A
ICM	VGE = ±15 V; RG = 22 Ω; TVJ = 125°C	100	A
VCEK	RBSOA, Clamped inductive load; L = 100 µH	VCES
tSC (SCSOA)	VCE = 900 V; VGE = ±15 V; RG = 22 Ω; TVJ = 125°C non-repetitive	10	µs
Ptot	TC = 25°C	445	W