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IXFB38N100Q2

MOSFET 38 Amps 1000V 0.25 Rds

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SeekIC No. : 00158421 Detail

IXFB38N100Q2: MOSFET 38 Amps 1000V 0.25 Rds

IXFB38N100Q2 Data Sheet

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Part Number:
IXFB38N100Q2
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 1000 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 38 A
Resistance Drain-Source RDS (on) : 0.28 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : PLUS 264 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 38 A
Drain-Source Breakdown Voltage : 1000 V
Package / Case : PLUS 264
Resistance Drain-Source RDS (on) : 0.28 Ohms


Features:

·Double metal process for low gate resistance
·Unclamped Inductive Switching (UIS) rated
·Low package inductance  - easy to drive and to protect
·Fast intrinsic rectifier


Application

·DC-DC converters
·Switched-mode and resonant-mode power supplies, >500kHz switching
·DC choppers
·Pulse generation
·Laser drivers


Specifications

Parameter
Symbol
Maximum Ratings
TJ = 25°C to 150°C
VDS
1000
V
TJ = 25°C to 150°C; RGS = 1 M
VDGR
1000
Continuous
VGS
±30
Transient
VGSM
±40
V
TC = 25°C
ID25
38
A
TC = 25°C,pulse width limited by TJM
IDM
152
A
TC = 25°C
IAR
38
A
TC = 25°C
EAR
60
mJ
TC = 25°C
EAS
5.0
J
IS IDM, di/dt 100 A/s, VDD VDSS
TJ 150°C, RG = 2
dv/dt
20
V/ns
TC = 25°C
PD
890
W
 
TJM
150
°C
 
TJ,Tstg
-55to150
°C
1.6 mm (0.063 in.) from case for 10 s
TL
300
°C
Mounting Force
Fc
30to120/7.5to27
N/Ib
 
Weight
10
g



Parameters:

Technical/Catalog InformationIXFB38N100Q2
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25° C38A
Rds On (Max) @ Id, Vgs250 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 7200pF @ 25V
Power - Max890W
PackagingTube
Gate Charge (Qg) @ Vgs250nC @ 10V
Package / CaseISOPLUS264?
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFB38N100Q2
IXFB38N100Q2



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