IXFB70N60Q2 Selling Leads, Price trend , Ixys, IXFB70N60Q2 DataSheet download, circuit diagram from SeekIC.com

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IXFB70N60Q2: MOSFET 70 Amps 600V

IXFB70N60Q2 Data Sheet

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Part Number:: IXFB70N60Q2
Mfg:: Ixys
Supply Ability:: 5000

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Upload time: 2025/12/4

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Product Details

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	600 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	70 A
Resistance Drain-Source RDS (on) :	0.08 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	PLUS 264	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Resistance Drain-Source RDS (on) : 0.08 Ohms
Continuous Drain Current : 70 A
Package / Case : PLUS 264

Features:

· Double metal process for low gateresistance
· Unclamped Inductive Switching (UIS)rated
· Low package inductance
- easy to drive and to protect
· Fast intrinsic rectifier

Application

· DC-DC converters
· Switched-mode and resonant-mode power supplies, >500kHz switching
· DC choppers
· Pulse generation
· Laser drivers

Parameters:

Technical/Catalog Information	IXFB70N60Q2
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	70A
Rds On (Max) @ Id, Vgs	80 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	7200pF @ 25V
Power - Max	890W
Packaging	Tube
Gate Charge (Qg) @ Vgs	265nC @ 10V
Package / Case	ISOPLUS264?
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFB70N60Q2 IXFB70N60Q2

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IXFB70N60Q2

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