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IXFB80N50Q2

MOSFET 80 Amps 500V 0.06 Rds

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SeekIC No. : 00159210 Detail

IXFB80N50Q2: MOSFET 80 Amps 500V 0.06 Rds

IXFB80N50Q2 Data Sheet

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Part Number:
IXFB80N50Q2
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 0.06 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : PLUS 264 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 80 A
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : PLUS 264
Resistance Drain-Source RDS (on) : 0.06 Ohms


Features:

·Double metal process for low gate resistance
·Unclamped Inductive Switching (UIS) rated
·Low package inductance
   - easy to drive and to protect
·Fast intrinsic rectifier

 




Application

·DC-DC converters
·Switched-mode and resonant-mode power supplies, >500kHz switching
·DC choppers
·Pulse generation
·Laser drivers


Specifications

Symbol Test Conditions Maximum Ratings
VDSS
VDGR		 TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M		 500
500		 V
V
VGS
VGSM		 Continuous
Transient		 ±20
±30
 V
V
ID25
IDM
IAR
 TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
 80
320
80		 A
A
A


EAR
EAS

 TC = 25°C
TC = 25°C		 60
5.0

mJ
J

dv/dt IS IDM, di/dt 100 A/s, VDD VDSS
TJ 150°C, RG = 2 		20 V/ns
PD TC = 25°C 890 W
TJ
TJM
Tstg		   -55 ... +150
150
-55 ... +150		 °C
°C
°C
TL 1.6 mm (0.062 in.) from case for 10 s 300 °C



Parameters:

Technical/Catalog InformationIXFB80N50Q2
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs60 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 15000pF @ 25V
Power - Max960W
PackagingTube
Gate Charge (Qg) @ Vgs250nC @ 10V
Package / CaseISOPLUS264?
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFB80N50Q2
IXFB80N50Q2



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