IXFE55N50

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Resistance Drain-Source RDS (on) : 0.09 Ohms
Continuous Drain Current : 47 A
Configuration : Single Dual Source
Package / Case : ISOPLUS 227


Features:

•Low cost direct-copper bonded aluminium package
•Encapsulating epoxy meets UL 94 V-0, flammability classification
•2500V isolation
•Low drain to case capacitance
•Low R_{DS (on)} HDMOS^TM process
•Rugged polysilicon gate cell structure
•Unclamped Inductive Switching (UIS) rated
•Low package inductance
•Fast intrinsic Rectifier
•Conforms to SOT-227B outline


Application

• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• Temperature and lighting controls


Parameters:

Technical/Catalog Information	IXFE55N50
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	47A
Rds On (Max) @ Id, Vgs	*
Input Capacitance (Ciss) @ Vds	9400pF @ 25V
Power - Max	500W
Packaging	Tube
Gate Charge (Qg) @ Vgs	330nC @ 10V
Package / Case	SOT-227B miniBLOC
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFE55N50 IXFE55N50