IXFF24N100

Power Dissipation :
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Configuration : Single
Gate-Source Breakdown Voltage : +/- 20 V
Package / Case : ISOPLUS i4-PAC
Packaging : Tube
Resistance Drain-Source RDS (on) : 0.39 Ohms
Drain-Source Breakdown Voltage : 1000 V
Continuous Drain Current : 22 A


Features:

• HiPerFET^TM technology
   - low R^DSon
   - low gate charge for high frequency operation
   - unclamped inductive switching (UIS) capability
   - dv/dt ruggedness
   - fast intrinsic reverse diode
• ISOPLUS I4-PAC^TM high voltage package
   - isolated back surface
   - enlarged creepage towards heatsink
   - enlarged creepage between high voltage pins
   - application friendly pinout
   - high reliability
   - industry standard outline


Application

• switched mode power supplies
• DC-DC converters
• resonant converters


Specifications

Symbol	Conditions	Maximum	Ratings
VDSS	TVJ = 25°C to 150°C	100	V
VGS		± 20	V
ID25	TC = 25°C	22	A
ID90	TC = 90°C	15	A
IF25	(diode) TC = 25°C	120	A
IF90	(diode) TC = 25°C	75	A
dv/dt)	VDS < VDSS; IF100A;|diF/dt|100A/µs; RG = 2 TVJ = 150°C	5	V/ns
EAR	TC = 25°C	64	mJ

Parameters:

Technical/Catalog Information	IXFF24N100
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	1000V (1kV)
Current - Continuous Drain (Id) @ 25° C	22A
Rds On (Max) @ Id, Vgs	390 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds	-
Power - Max	-
Packaging	Tube
Gate Charge (Qg) @ Vgs	250nC @ 10V
Package / Case	ISOPLUS i4-PAC?
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFF24N100 IXFF24N100