IXFH120N20P Selling Leads, Price trend , Ixys, IXFH120N20P DataSheet download, circuit diagram from SeekIC.com

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IXFH120N20P: MOSFET 120 Amps 200V 0.022 Rds

IXFH120N20P Data Sheet

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Part Number:: IXFH120N20P
Mfg:: Ixys
Supply Ability:: 5000

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Upload time: 2024/4/27

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	200 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	120 A
Resistance Drain-Source RDS (on) :	0.022 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 175 C	Mounting Style :	Through Hole
Package / Case :	TO-247	Packaging :	Box

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Continuous Drain Current : 120 A
Mounting Style : Through Hole
Drain-Source Breakdown Voltage : 200 V
Package / Case : TO-247
Resistance Drain-Source RDS (on) : 0.022 Ohms
Packaging : Box

Features:

·International standard packages
·Unclamped Inductive Switching (UIS) rated
·Low package inductance
- easy to drive and to protect

Application

·Easy to mount
·Space savings
·High power density

Parameters:

Technical/Catalog Information	IXFH120N20P
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	120A
Rds On (Max) @ Id, Vgs	22 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	6000pF @ 25V
Power - Max	714W
Packaging	Tube
Gate Charge (Qg) @ Vgs	152nC @ 10V
Package / Case	TO-247
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFH120N20P IXFH120N20P

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IXFH120N20P

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