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IXFH13N100

MOSFET 13 Amps 1000V 0.9 Rds

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SeekIC No. : 00159094 Detail

IXFH13N100: MOSFET 13 Amps 1000V 0.9 Rds

IXFH13N100 Data Sheet

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Part Number:
IXFH13N100
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 1000 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 12.5 A
Resistance Drain-Source RDS (on) : 0.9 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247AD Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 1000 V
Resistance Drain-Source RDS (on) : 0.9 Ohms
Continuous Drain Current : 12.5 A
Package / Case : TO-247AD


Features:

·International standard packages
·Low RDS (on) HDMOSTM process
·Rugged polysilicon gate cell structure
·Unclamped Inductive Switching (UIS) rated
·Low package inductance
   -easy to drive and to protect
·Fast intrinsic Rectifier


Application

·DC-DC converters
·Synchronous rectification
·Battery chargers
·Switched-mode and resonant-mode power supplies
·DC choppers
·AC motor control
·Temperature and lighting controls
·Low voltage relays


Specifications

Symbol Test Conditions Maximum Ratings
VDSS
VDGR		 TJ = 25°C to 150°C
TJ = 25°C to 150°C.RGS=1M		 1000
1000		 V
V
VGS
VGSM		 Continuous
Transient		 ±20
±30
 V
V
ID25
IDM
IAR
 TC = 25°C
pulse width limited by TJM
TC = 25°C

10N100 10
12N100 12
13N100 12.5
10N100 40
12N100 48
13N100 50
10N100 10
12N100 12
13N100 12.5		 A
A
A
A
A
A
A
A
A

EAR
 TC = 25°C
 30
mJ
dv/dt IS IDM, di/dt 100 A/s, VDD VDSS
TJ 150°C, RG = 2		 5 V/ns
PD TC = 25°C 300 W
TJ
TJM
Tstg		   -55 ... +150
150
-55 ... +150		 °C
°C
°C
TL 1.6 mm (0.062 in.) from case for 10 s 300 °C
Md
 Mounting torque
1.13/10
 Nm/lb.in.
Weight   TO-204 = 18 g,
TO-247 = 6 g		 g



Parameters:

Technical/Catalog InformationIXFH13N100
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25° C12.5A
Rds On (Max) @ Id, Vgs900 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 4000pF @ 25V
Power - Max300W
PackagingTube
Gate Charge (Qg) @ Vgs155nC @ 10V
Package / CaseTO-247AD
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFH13N100
IXFH13N100



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