MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/18A
IXFH18N100Q3: MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/18A
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Features: ·International standard packages·Unclamped Inductive Switching (UIS) rated· Low package ...
Features: · RF capable MOSFETs· Double metal process for low gate resistance· Unclamped Inductive ...
Features: • International standard packages• Low RDS (on) HDMOSTM process• Rugge...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 1000 V | ||
Gate-Source Breakdown Voltage : | 30 V | Continuous Drain Current : | 18 A | ||
Resistance Drain-Source RDS (on) : | 660 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-247 | Packaging : | Tube |