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IXFH22N55

MOSFET 550V 22A

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SeekIC No. : 00159171 Detail

IXFH22N55: MOSFET 550V 22A

IXFH22N55 Data Sheet

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Part Number:
IXFH22N55
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 550 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 22 A
Resistance Drain-Source RDS (on) : 0.27 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247AD Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 22 A
Drain-Source Breakdown Voltage : 550 V
Resistance Drain-Source RDS (on) : 0.27 Ohms
Package / Case : TO-247AD


Features:

·International standard packages JEDEC TO-247 AD
·Low RDS (on) HDMOSTM process
·Rugged polysilicon gate cell structure
·Unclamped Inductive Switching (UIS) rated
·Low package inductance (< 5 nH)
   - easy to drive and to protect
·Fast intrinsic Rectifier


Application

·Power Factor Control Circuits
·Uninterruptible Power Supplies (UPS)
·Battery chargers
·Switched-mode and resonant-mode power supplies
·DC choppers
·Temperature and lighting controls
·Low voltage relays


Specifications

Symbol Test Conditions Maximum Ratings
VDSS
VDGR		 TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ		 550
550		 V
V
VGS
VGSM		 Continuous
Transient		 ±20
±30
 V
V
ID25
IDM
IAR
 TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
 22
88
22		 A
A
A


EAR
TC = 25°C 30
mJ
dv/dt IS IDM, di/dt 100 A/µs, VDD VDSS
TJ 150°C, RG = 2 Ω		 5 V/ns
PD TC = 25°C 300 W
TJ
TJM
Tstg		   -55 ... +150
150
-55 ... +150		 °C
°C
°C
TL 1.6 mm (0.062 in.) from case for 10 s 300 °C
Md
 Mounting torque
 1.13/10
 Nm/lb.in.
Weight   6 g



Parameters:

Technical/Catalog InformationIXFH22N55
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)550V
Current - Continuous Drain (Id) @ 25° C22A
Rds On (Max) @ Id, Vgs270 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 4200pF @ 25V
Power - Max300W
PackagingTube
Gate Charge (Qg) @ Vgs170nC @ 10V
Package / CaseTO-247AD
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFH22N55
IXFH22N55



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