IXFH23N80Q

MOSFET 23 Amps 800V 0.40 Rds

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SeekIC No. : 00158330 Detail

IXFH23N80Q: MOSFET 23 Amps 800V 0.40 Rds

floor Price/Ceiling Price

Part Number:
IXFH23N80Q
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/7/12

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 800 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 23 A
Resistance Drain-Source RDS (on) : 0.42 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247AD Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Resistance Drain-Source RDS (on) : 0.42 Ohms
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 23 A
Drain-Source Breakdown Voltage : 800 V
Package / Case : TO-247AD


Parameters:

Technical/Catalog InformationIXFH23N80Q
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25° C23A
Rds On (Max) @ Id, Vgs420 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 4900pF @ 25V
Power - Max500W
PackagingTube
Gate Charge (Qg) @ Vgs130nC @ 10V
Package / CaseTO-247AD
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFH23N80Q
IXFH23N80Q



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