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IXFH26N50Q

MOSFET 500V 26A

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SeekIC No. : 00151140 Detail

IXFH26N50Q: MOSFET 500V 26A

IXFH26N50Q Data Sheet

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Part Number:
IXFH26N50Q
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 26 A
Resistance Drain-Source RDS (on) : 0.2 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247AD Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Resistance Drain-Source RDS (on) : 0.2 Ohms
Continuous Drain Current : 26 A
Package / Case : TO-247AD


Features:

·IXYS advanced low Qg process
·International standard packages
·Low RDS (on)
·Unclamped Inductive Switching (UIS) rated
·Fast switching
·Molding epoxies meet UL 94 V-0
·flammability classification


Specifications

Symbol Test Conditions Maximum Ratings
VDSS
VDGR		 TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M		 500
500		 V
V
VGS
VGSM		 Continuous
Transient		 ±20
±30
 V
V
ID25
IDM
IAR
 TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
 24N50 24
26N50 26
24N50 96
26N50 104
24N50 24
26N50 26		 A
A
A


EAR
EAS

 TC = 25°C
TC = 25°C		 30
1.5

mJ
J

dv/dt IS IDM, di/dt 100 A/s, VDD VDSS
TJ 150°C, RG = 2 		5 V/ns
PD TC = 25°C 300 W
TJ
TJM
Tstg		   -55 ... +150
150
-55 ... +150		 °C
°C
°C
TL 1.6 mm (0.062 in.) from case for 10 s 300 °C
Md
 Mounting torque
1.13/10
 Nm/lb.in.
Nm/lb.in.
Weight TO-247
TO-268		 6
4		 g
g



Description

·Easy to mount
·Space savings
·High power density

IXFH26N50Q




Parameters:

Technical/Catalog InformationIXFH26N50Q
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C26A
Rds On (Max) @ Id, Vgs200 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 3900pF @ 25V
Power - Max300W
PackagingTube
Gate Charge (Qg) @ Vgs95nC @ 10V
Package / CaseTO-247AD
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFH26N50Q
IXFH26N50Q



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