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IXFH26N60

Features: • International standard packages• EpoxymeetUL94V-0, flammability classification• Low RDS (on) HDMOSTM process• Rugged polysilicon gate cell structure• Avalanche energy and current rated• Fast intrinsic RectifierSpecifications Symbol Test Con...

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SeekIC No. : 004381522 Detail

IXFH26N60: Features: • International standard packages• EpoxymeetUL94V-0, flammability classification• Low RDS (on) HDMOSTM process• Rugged polysilicon gate cell structure• Avalan...

IXFH26N60 Data Sheet

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Part Number:
IXFH26N60
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

• International standard packages
• EpoxymeetUL94V-0, flammability classification
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Avalanche energy and current rated
• Fast intrinsic Rectifier


Specifications

Symbol
Test Conditions
Maximum
Ratings
IXFH/ IXFT
IXFK
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
600
600
600
600
V
V
VGS
VGSM
Continuous
Transient
±20
±30
±20
±30
V
V
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
26
104
26
28
112
28
A
A
A
EAR
TC = 25°C
50
50

EAS

TC = 25°C
1.5
1.5
mjj
dv/dt
IS IDM, di/dt 100 A/s, VDD VDSS,
TJ 150°C, RG = 2
5
5
V/ns

PD

TC = 25°C
360

460

W

TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C

TL

1.6 mm (0.063 in) from case for 10 s
300

300

°C

Md
Mounting torque TO-247
1.13/100
.9/6
Nm/lb.in.
Weight
6
10
g



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