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IXFH69N30P

MOSFET 69 Amps 300V 0.049 Rds

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SeekIC No. : 00154323 Detail

IXFH69N30P: MOSFET 69 Amps 300V 0.049 Rds

IXFH69N30P Data Sheet

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Part Number:
IXFH69N30P
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 300 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 69 A
Resistance Drain-Source RDS (on) : 0.049 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247 Packaging : Box    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Package / Case : TO-247
Drain-Source Breakdown Voltage : 300 V
Continuous Drain Current : 69 A
Resistance Drain-Source RDS (on) : 0.049 Ohms
Packaging : Box


Parameters:

Technical/Catalog InformationIXFH69N30P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)300V
Current - Continuous Drain (Id) @ 25° C69A
Rds On (Max) @ Id, Vgs49 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 4960pF @ 25V
Power - Max500W
PackagingTube
Gate Charge (Qg) @ Vgs180nC @ 10V
Package / CaseTO-247
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFH69N30P
IXFH69N30P



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