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IXFH70N15

MOSFET 70 Amps 150V 0.028 Rds

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SeekIC No. : 00159076 Detail

IXFH70N15: MOSFET 70 Amps 150V 0.028 Rds

IXFH70N15 Data Sheet

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Part Number:
IXFH70N15
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 150 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 70 A
Resistance Drain-Source RDS (on) : 0.028 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247AD Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 150 V
Resistance Drain-Source RDS (on) : 0.028 Ohms
Continuous Drain Current : 70 A
Package / Case : TO-247AD


Features:

• International standard packages
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Low package inductance
  - easy to drive and to protect
• Fast intrinsic Rectifier



Specifications

Symbol
 Test Conditions
Maximum
Ratings
VDSS
 TJ = 25 to 150
150
V
VDGR
 TJ = 25 to 150; RGS = 1 M
150
V
VGS
 Continuous
±20
V
VGSM
 Transient
±30
V
ID25
 TC = 25
70
A
IDM
 TC = 25, pulse width limited by TJM
280
A
IAR
 TC = 25
70
A
EAR
 TC = 25
30
mJ
EAS
 TC = 25
1.0
J
dv/dt
 IS IDM, di/dt 100 A/s, VDD VDSS,
TJ 150, RG = 2
5
V/ns
PD
 TC = 25
300
W
TJ
  
-55 ... +150
TJM
  
150
Tstg
  
-55 ... +150
TL
 1.6 mm (0.062 in.) from case for 10 s
300
Md
 Mounting torque
1.13/10
Nm/lb.in.
Weight
 TO-247 AD
6
g
 TO-268
4
g



Parameters:

Technical/Catalog InformationIXFH70N15
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25° C70A
Rds On (Max) @ Id, Vgs28 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 3600pF @ 25V
Power - Max300W
PackagingTube
Gate Charge (Qg) @ Vgs180nC @ 10V
Package / CaseTO-247AD
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFH70N15
IXFH70N15



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