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IXFK102N30P: MOSFET 102 Amps 300V 0.033 Rds

IXFK102N30P Data Sheet

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Part Number:: IXFK102N30P
Mfg:: Ixys
Supply Ability:: 5000

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Upload time: 2024/4/28

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Product Details

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	300 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	102 A
Resistance Drain-Source RDS (on) :	0.033 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-264	Packaging :	Box

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Resistance Drain-Source RDS (on) : 0.033 Ohms
Package / Case : TO-264
Drain-Source Breakdown Voltage : 300 V
Packaging : Box
Continuous Drain Current : 102 A

Parameters:

Technical/Catalog Information	IXFK102N30P
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	300V
Current - Continuous Drain (Id) @ 25° C	102A
Rds On (Max) @ Id, Vgs	33 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	7500pF @ 25V
Power - Max	700W
Packaging	Bulk
Gate Charge (Qg) @ Vgs	224nC @ 10V
Package / Case	TO-264
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFK102N30P IXFK102N30P

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IXFK102N30P

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