MOSFET 180 Amps 85V 0.007 Rds
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Features: · International standard packages· Low RDS (on) HDMOSTM process· Rugged polysilicon gate...
Features: · RF capable MOSFETs· Double metal process for low gate resistance· Unclamped Inductive ...
Features: • International standard packages• JEDECTO-264 AA,epoxymeet UL 94 V-0, flamm...
| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 85 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 180 A | ||
| Resistance Drain-Source RDS (on) : | 0.007 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-264AA | Packaging : | Tube |
| Technical/Catalog Information | IXFK180N085 |
| Vendor | IXYS |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 85V |
| Current - Continuous Drain (Id) @ 25° C | 180A |
| Rds On (Max) @ Id, Vgs | 7 mOhm @ 500mA, 10V |
| Input Capacitance (Ciss) @ Vds | 9100pF @ 25V |
| Power - Max | 560W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 320nC @ 10V |
| Package / Case | TO-264AA |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IXFK180N085 IXFK180N085 |