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IXFK180N15P

MOSFET 180 Amps 150V 0.011 Rds

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SeekIC No. : 00154339 Detail

IXFK180N15P: MOSFET 180 Amps 150V 0.011 Rds

IXFK180N15P Data Sheet

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Part Number:
IXFK180N15P
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 150 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 180 A
Resistance Drain-Source RDS (on) : 0.011 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-264 Packaging : Box    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Drain-Source Breakdown Voltage : 150 V
Continuous Drain Current : 180 A
Package / Case : TO-264
Resistance Drain-Source RDS (on) : 0.011 Ohms
Packaging : Box


Parameters:

Technical/Catalog InformationIXFK180N15P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25° C180A
Rds On (Max) @ Id, Vgs11 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 7000pF @ 25V
Power - Max830W
PackagingBulk
Gate Charge (Qg) @ Vgs240nC @ 10V
Package / CaseTO-264
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFK180N15P
IXFK180N15P



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