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IXFK20N120

MOSFET 20 Amps 1200 V 0.75 Ohms Rds

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SeekIC No. : 00158273 Detail

IXFK20N120: MOSFET 20 Amps 1200 V 0.75 Ohms Rds

IXFK20N120 Data Sheet

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Part Number:
IXFK20N120
Mfg:
Ixys
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

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Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 1200 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 20 A
Resistance Drain-Source RDS (on) : 0.75 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-264AA Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 20 A
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 1200 V
Resistance Drain-Source RDS (on) : 0.75 Ohms
Package / Case : TO-264AA


Parameters:

Technical/Catalog InformationIXFK20N120
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25° C20A
Rds On (Max) @ Id, Vgs750 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 7400pF @ 25V
Power - Max780W
PackagingTube
Gate Charge (Qg) @ Vgs160nC @ 10V
Package / CaseTO-264AA
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFK20N120
IXFK20N120



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