IXFK48N55

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Packaging: Tube
Mounting Type: Through Hole
Gate Charge (Qg) @ Vgs: 330nC @ 10V
Current - Continuous Drain (Id) @ 25° C: 48A
Manufacturer: IXYS
Series: HiPerFET™
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264AA
Power - Max: 560W
Input Capacitance (Ciss) @ Vds: 8900pF @ 25V
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Drain to Source Voltage (Vdss): 550V
Rds On (Max) @ Id, Vgs: 110 mOhm @ 24A, 10V


Parameters:

Technical/Catalog Information	IXFK48N55
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	550V
Current - Continuous Drain (Id) @ 25° C	48A
Rds On (Max) @ Id, Vgs	110 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	8900pF @ 25V
Power - Max	560W
Packaging	Tube
Gate Charge (Qg) @ Vgs	330nC @ 10V
Package / Case	TO-264AA
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFK48N55 IXFK48N55