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IXFK50N50

MOSFET 50 Amps 500V 0.1 Rds

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SeekIC No. : 00159134 Detail

IXFK50N50: MOSFET 50 Amps 500V 0.1 Rds

IXFK50N50 Data Sheet

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Part Number:
IXFK50N50
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/17

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 50 A
Resistance Drain-Source RDS (on) : 0.1 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-264AA Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 50 A
Drain-Source Breakdown Voltage : 500 V
Resistance Drain-Source RDS (on) : 0.1 Ohms
Package / Case : TO-264AA


Features:

• International standard packages
• Encapsulating epoxy meets UL 94 V-0, flammability classification
• miniBLOC with Aluminium nitride isolation
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Low package inductance
• Fast intrinsic Rectifier


Application

• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• Temperature and lighting controls


Parameters:

Technical/Catalog InformationIXFK50N50
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C50A
Rds On (Max) @ Id, Vgs90 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 9400pF @ 25V
Power - Max625W
PackagingTube
Gate Charge (Qg) @ Vgs330nC @ 10V
Package / CaseTO-264AA
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFK50N50
IXFK50N50



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