IXFK64N50P Selling Leads, Price trend , Ixys, IXFK64N50P DataSheet download, circuit diagram from SeekIC.com

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IXFK64N50P: MOSFET 500V 64A

IXFK64N50P Data Sheet

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Part Number:: IXFK64N50P
Mfg:: Ixys
Supply Ability:: 5000

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1~5000

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Upload time: 2024/4/27

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	500 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	64 A
Resistance Drain-Source RDS (on) :	0.085 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-264	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 0.085 Ohms
Continuous Drain Current : 64 A
Package / Case : TO-264

Parameters:

Technical/Catalog Information	IXFK64N50P
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	64A
Rds On (Max) @ Id, Vgs	85 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	8700pF @ 25V
Power - Max	830W
Packaging	Tube
Gate Charge (Qg) @ Vgs	150nC @ 10V
Package / Case	TO-264
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFK64N50P IXFK64N50P

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IXFK64N50P

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